We investigate a novel GaAs-based laser power converters (LPCs) grown by metal-organic chemical vapor deposition (MOCVD), which uses a single monolithic structure with six junctions connected by tunnel junctions to obtain a high output voltage. The LPCs with diameters of active aperture of 2 mm and 4 mm were fabricated and tested. The test results show that under an 808 nm laser, two LPCs both show an open circuit voltage of above 6.5 V. A maximum power conversion efficiency of 50.2% is obtained by 2 mm sample with laser power of 0.256 W, and an output electric power of 1.9 W with laser power of 4.85 W is obtained by 4 mm sample. The performances of the LPCs are deteriorated under illumination of high flux, and the 4 mm sample shows a higher laser power tolerance.

采用金属有机化学气相沉积技术, 利用自催化法, 在Si(100)、(111)衬底上成功生长了InP纳米线。利用扫描电镜观察样品表面, 在Si(100)、(111)衬底上生长的纳米线形貌相似, 纳米线面密度不同。利用X射线衍射和透射电镜研究纳米线的生长取向和晶体结构, 结果显示纳米线具有闪锌矿结构, 生长方向〈111〉, 并且具有层状孪晶结构。与InP体材料相比, 纳米线的光致发光峰位蓝移, 半峰全宽增大, 拉曼散射TO和LO峰向低波数频移, 频移随激发光功率减弱而减小。

采用低压金属有机化学气相沉积(LP-MOCVD)技术,在掺Fe的半绝缘InP衬底上制备了InAs0.157P0.843外延层。利用变温光致发光研究了InAs0.157P0.843外延层在13~300 K温度范围内的发光特性,通过理论分析与计算,证实了在应力作用下InAs0.157P0.843外延层价带顶的轻重空穴带发生了劈裂,并研究了导带底与价带顶轻空穴带之间形成的复合发光峰在应力作用下随温度的变化规律。